ace 7401 p - channel enhancement mode mosfet ver 1. 3 1 d escription the ACE7401 is the p - channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices ar e particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in - line power loss are needed in a very small outline surface mount package . features ? - 30v/ - 2.8 a, r d s(on) = 115 m@v gs = - 10v ? - 30v/ - 2.5 a, r ds(on) = 125 m@v gs = - 4.5v ? - 30v/ - 1.5 a, r ds(on) = 170 m@v gs = - 2.5v ? - 30v/ - 1.0a, r ds(on) =240m@v gs = - 1.8v ? super high density cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capability applicati on ? power management in note book ? portable equipment ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter absolute maximum ratings parameter symbol max unit drain - source voltage v dss - 30 v gate - source voltage v gss 12 v continuo us drain current (t j =150 ) t a =25 i d - 2.8 a t a =70 - 2.1 pulsed drain current i dm - 8 a continuous source current (diode conduction) i s - 1.4 a power dissipation t a =25 p d 0.33 w t a =70 0.21 operating junction temperature t j - 55/ 150 o c storage temperature range t stg - 55 /150 o c thermal resistance - junction to ambient r ja 105 o c /w
ace 7 401 p - channel enhancement mode mosfet ver 1. 3 2 packaging type sot - 323 3 1 2 ordering information ace 7401 xx + h electrical charact eristics t a =25 , unless otherwise noted parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 30 v gate threshold voltage v gs(th) v d s =v gs , i d = - 250 ua - 0.4 - 1.0 gate leakage current i gss v ds =0v,v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 24v, v gs =0v - 1 ua v ds = - 24v, v gs =0v t j = 8 5 - 5 on - state drain current i d(on) v ds = - 5v, v gs = - 4.5 v - 4 a drain - source on - resistance r ds(on) v gs = - 10v, i d = - 2.8 a 0.105 0.115 v gs = - 4. 5 v, i d = - 2.5 a 0.125 0.135 v gs = - 2.5 v, i d = - 1.5 a 0.155 0.170 v gs = - 1.8 v, i d = - 1.0 a 0.210 0.240 forward transconductance gfs v ds = - 10 v,i d = - 2.8 a 4 s diode forward voltage v sd i s = - 1. 2 a, v gs =0v - 0.8 - 1.2 v dynamic total gate charge q g v ds = - 15v, v gs = - 4.5 v, i d = - 2.0 a 5.8 nc gate - source charge q gs 0.8 sot - 323 description 1 gate 2 source 3 drain halogen - free c m : sot - 323 pb - free
ace 7 401 p - channel enhancement mode mosfet ver 1. 3 3 gate - drain charge q gd 1.5 input capacitance ciss v ds = - 15 v , v gs =0v, f=1mhz 380 pf output capacitance coss 55 reverse transfer capacitance crss 40 turn - on time td(on) v dd = - 15v, r l =1 5 , i d = - 1.0a, v gen = - 10v, r g = 3 6 ns tr 3.9 turn - off time td(off) 40 tf 15 typical performance characteristics output characte ristics transfer characteristics v ds - drain - to - source voltage (v) v gs - gate - to - source voltage (v) on - resistance vs. drain current capacitance i d - drain current (a) v ds - drain - to - source voltage (v)
ace 7 401 p - channel enhancement mode mosfet ver 1. 3 4 gate charge on - resistance vs. junction temperature q g - total gate charge (nc) t j - junction temperature ( ) source - drain diode forward voltage on - resistance vs. gate - to - source voltage v sd - source - to - drain voltage (v) v gs - gate - to - source voltage (v) threshold voltage single pulse power t j - temperature( ) time (sec)
ace 7 401 p - channel enhancement mode mosfet ver 1. 3 5 normalized thermal transient impedance, junction - to foot
ace 7 401 p - channel enhancement mode mosfet ver 1. 3 6 packing information so t - 323
ace 7 401 p - channel enhancement mode mosfet ver 1. 3 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counse l of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to ca use the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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